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Research Technician

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Description of Group/Project:

We are seeking an individual with background in thin-film growth for the development of Gallium Oxide thin-films for the development of cutting-edge nanoelectronic devices. The development will be carried out mainly at the Pulsed Layer Deposition system at the ICN2 facilities. 

Main Tasks and responsibilities:

  • To develop a thin-film technology for the growth of gallium oxide layers onto different substrates with different conductivities and doping control.
  • To identify other ultra-wide bandgap oxides suitable for semiconductor device definition.
  • To help in the definition of novel functional gallium oxide heterojunctions.
  • To test the optoelectronic properties of the different fabricated structures.
  • To report project progress.
  • Possibility of completing a PhD.  

Education, Experience, Knowledge and Competences required:

· Education

Physics, Nanoelectronics, Electrical Engineering, Chemistry or similar.

· Knowledge

Thin-film growth by PLD.

High level of English.

· Professional Experience

Ideally thin-film growth by PLD.

· Competences

Self-confidence.

Independence.

Creativity.

Research Career Profile (According to the European Framework for Research Careers):

R1 First Stage Researcher

Summary of conditions:

  • Full time work (37,5h/week)
  • Contract Length: 2 years approximately.
  • Salary will depend on qualifications and demonstrated experience.
  • Salary according to the cost of living in Barcelona.
  • Support to the relocation issues.
  • Life Insurance.

Estimated Incorporation date: January 2018

How to apply:

All applications must be made via the ICN2 website and include the following:

1.              A cover letter.

2.              A full CV including contact details.

3.              2 Reference letters or referee contacts.

Deadline for applications: December 17th

Equal opportunities:

ICN2 is an equal opportunity employer committed to diversity and inclusion of people with disabilities.